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2024 Vol.37, Issue 6 Preview Page

Research Paper

Comparison of Diverse Topology Optimization Methods for Optical Proximity Correction Technique

광학 근접 보정 기술을 위한 다양한 위상 최적설계 방법의 비교

Young Hun Choi1
,
Sol Ji Han1
,
Jae Yeop Na1
,
Gil Ho Yoon2*
최 영훈1
,
한 솔지1
,
나 재엽1
,
윤 길호2*
1Graduate Student, Department of Mechanical Convergence Engineering, Hanyang University, Seoul, 04763, Korea
2Professor, Department of Mechanical Engineering, Hanyang University, Seoul, 04763, Korea
1한양대학교 융합기계공학과 석박사통합과정
2한양대학교 기계공학부 교수
*Corresponding Author
31 December 2024. pp. 417-423
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Abstract

This study applies diverse topology optimization methods to the design of masks used in photolithography processes and compares their performance in optical proximity correction (OPC). During the photolithography process, optical proximity correction technique that compensates for the effects of light interference is one of the most critical factors determining semiconductor quality. In traditional OPC, the design is performed by adjusting local parts of the mask and verifying the correction effects through simulations and experiments. Since there are limitations in obtaining optimal mask patterns by using empirical design methods, the need for mask design using the topology optimization is increasing and some studies have utilized the topology optimization using gradient-based algorithm. In this study, we compare the designs obtained from conventional optimization with those obtained from topology optimization for binary structure (TOBS) and newly developed continuated TOBS and suggest further optimization directions.

Keywords
optical proximity correction
topology optimization
topology optimization of binary structures
photolithography process

본 논문에서는 마스크 설계에 다양한 위상 최적설계 기법을 적용하고, 광학 근접 보정 성능을 비교한다. 포토리소그래피 공정 중 포토레지스트에 가해지는 빛의 간섭 효과를 보정하는 광학 근접 보정 기술은 반도체 품질을 결정하는 중요한 요소 중 하나이다. 전통적인 광학 근접 보정 기술에서는 마스크의 일부 요소를 조정하며 보정 효과를 시뮬레이션과 실험으로 확인하면서 설계를 진행한다. 이러한 경험적 설계를 통해 최적의 마스크 형상을 얻는 데는 한계가 있기 때문에, 위상 최적화 기법을 이용한 마스크 설계의 필요성이 증가하고 있으며, 민감도 기반 알고리듬을 이용한 위상 최적설계가 진행되어 왔다. 본 논문에서는 이진 구조 위상 최적설계(TOBS)와 새롭게 고안한 완화된 이진 구조 위상 최적설계(Continuated TOBS)를 이용하여 기존 최적설계와 비교하고, 더 발전된 최적설계 방향을 제시한다.

키워드
광학 근접 보정(OPC)
위상 최적설계
이진 구조 위상 최적설계(TOBS)
포토리소그래피 공정
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Information
  • Publisher :Computational Structural Engineering Institute of Korea
  • Publisher(Ko) :한국전산구조공학회
  • Journal Title :Journal of the Computational Structural Engineering Institute of Korea
  • Journal Title(Ko) :한국전산구조공학회 논문집
  • Volume : 37
  • No :6
  • Pages :417-423
  • Received Date : 2024-09-19
  • Revised Date : 2024-10-10
  • Accepted Date : 2024-10-10
  • DOI :https://doi.org/10.7734/COSEIK.2024.37.6.417
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